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Basics

Details

Alternate

MBRTA600200R

GeneSiC Semiconductor

  • PDF: -
  • Packaging: Three Tower
  • ROHS:
  • Status: Obsolete
  • Series: -
  • RoHS: yes
  • Depth:
  • Mount: Chassis Mount
  • Speed: Fast Recovery = 200mA (Io)
  • Gender:
  • Height:
  • Length:
  • HTS Code: 8541.10.00.80
  • ECCN Code: EAR99
  • Inventory: In Stock
  • Packaging: Bulk
  • Published:
  • Shielding:
  • Diode Type: Schottky
  • Application: POWER
  • Orientation:
  • Part Status: Obsolete
  • RoHS Status: RoHS Compliant
  • Termination:
  • JESD-30 Code: R-PUFM-X3
  • Mounting Type: Chassis Mount
  • Terminal Form: UNSPECIFIED
  • Connector Type:
  • Package / Case: Three Tower
  • Case Connection: ISOLATED
  • Contact Plating:
  • Forward Current:
  • Number of Phases: 1
  • Wire/Cable Gauge:
  • Factory Lead Time:
  • Terminal Position: UPPER
  • Contact Resistance:
  • Number of Elements: 2
  • Diode Configuration: 1 Pair Common Anode
  • Reverse Current-Max: 4000μA
  • Peak Reverse Current:
  • Element Configuration: Common Anode
  • Diode Element Material: SILICON
  • Number of Terminations: 3
  • Supplier Device Package:
  • Max Reverse Voltage (DC): 200V
  • Average Rectified Current: 300A
  • Max Operating Temperature:
  • Min Operating Temperature:
  • Operating Temperature (Max): 150°C
  • Current - Reverse Leakage @ Vr: 4mA @ 200V
  • Non-rep Pk Forward Current-Max: 4000A
  • Voltage - DC Reverse (Vr) (Max):
  • Current - Average Rectified (Io):
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature - Junction: -55°C~150°C
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 300A
  • Max Repetitive Reverse Voltage (Vrrm):

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