IRFR120NTRPBF

Infineon

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W Single N-Channel 100 V 0.21 Ohm 25nC HEXFET® Power Mosfet - TO-252AA INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR Single N-Channel 100 V 48 W 25 nC Hexfet Power Mosfet Surface Mount - TO-252AA Trans MOSFET N-CH 100V 9.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 9.4A DPAK 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature N Channel Mosfet, 100V, 9.4A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR120NTRPBF. Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 48