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Basics

Details

G3S12003C

Global Power Technology-GPT

  • PDF: -
  • Packaging: Tape & Box (TB)
  • ROHS:
  • Status: Active
  • Series: -
  • Mfr: Global Power Technology-GPT
  • RoHS:
  • Speed: No Recovery Time > 500mA (Io)
  • Series:
  • Config.:
  • Package: Tape & Box (TB)
  • Vrrm(V):
  • Inventory: In Stock
  • Diode Type: Silicon Carbide Schottky
  • Mounting Type: Surface Mount
  • IF(A) Tc=25°C:
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Product Status: Active
  • IF(A) Tc=125°C:
  • IF(A) Tc=160°C:
  • Ifsm(A) Tc=25°C:
  • Capacitance @ Vr, F: 260pF @ 0V, 1MHz
  • VF（V）Tj=25°Cmax:
  • IR（uA）Tj=25°Cmax:
  • RTH-JC（°C/W） typ:
  • VF（V）Tj=175°Cmax:
  • VF（V）Tj=175°Ctyp:
  • VF（V）Tj=25°C typ:
  • IR（uA）Tj=175°Cmax:
  • IR（uA）Tj=175°Ctyp:
  • IR（uA）Tj=25°C typ:
  • Supplier Device Package: TO-252
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 μA @ 1200 V
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Operating Temperature - Junction: -55°C~175°C
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A

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