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Basics

Details

CGD65B200S2-T13

Cambridge GaN Devices

650V GAN HEMT, 200MOHM, DFN5X6.

  • PDF:
  • Packaging: 8-PowerVDFN
  • ROHS:
  • Status: active
  • Series: ICeGaN™
  • Mfr: Cambridge GaN Devices
  • Series: ICeGaN™
  • Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
  • FET Type: -
  • Vgs (Max): +20V, -1V
  • Technology: GaNFET (Gallium Nitride)
  • FET Feature: Current Sensing
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Product Status: Active
  • Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
  • Operating Temperature: -55°C~150°C(TJ)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
  • Supplier Device Package: 8-DFN (5x6)
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
  • Drain to Source Voltage (Vdss): 650 V
  • Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)

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